CMOS-based cryogenic control of silicon quantum circuits

X Xue, B Patra, JPG van Dijk, N Samkharadze… - Nature, 2021 - nature.com
The most promising quantum algorithms require quantum processors that host millions of
quantum bits when targeting practical applications. A key challenge towards large-scale …

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

A Ruffino, TY Yang, J Michniewicz, Y Peng… - Nature …, 2022 - nature.com
As quantum computers grow in complexity, the technology will have to evolve from large
distributed systems to compact integrated solutions. Spin qubits in silicon quantum dots are …

Design and characterization of a 28-nm bulk-CMOS cryogenic quantum controller dissipating less than 2 mW at 3 K

JC Bardin, E Jeffrey, E Lucero, T Huang… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
Implementation of an error-corrected quantum computer is believed to require a quantum
processor with a million or more physical qubits, and, in order to run such a processor, a …

Neural-network decoders for quantum error correction using surface codes: A space exploration of the hardware cost-performance tradeoffs

RWJ Overwater, M Babaie… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Quantum error correction (QEC) is required in quantum computers to mitigate the effect of
errors on physical qubits. When adopting a QEC scheme based on surface codes, error …

Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K

S Bonen, MS Dadash, A Zandieh, U Alakuşu… - Solid-State …, 2022 - Elsevier
Starting with the full characterization of the n-and p-MOSFETs in a 22-nm FDSOI CMOS
process from DC and S-parameter measurements over temperature in the 2 K to 400 K …

[HTML][HTML] Carbon-based cryoelectronics: graphene and carbon nanotube

X Deng, N Kang, Z Zhang - Chip, 2023 - Elsevier
The rise of quantum computing has prompted the interest in the field of cryogenic
electronics. Carbon-based materials hold great promise in the area of cryogenic electronics …

Cryogenic characterization of 16 nm FinFET technology for quantum computing

HC Han, F Jazaeri, A D'Amico… - … 2021-IEEE 47th …, 2021 - ieeexplore.ieee.org
This study presents the first in depth characterization of deep cryogenic electrical behavior of
a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad …

Performance and low-frequency noise of 22-nm FDSOI down to 4.2 K for cryogenic applications

BC Paz, M Cassé, C Theodorou… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted
silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the …

[HTML][HTML] Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

HC Han, F Jazaeri, A D'Amico, Z Zhao, S Lehmann… - Solid-State …, 2022 - Elsevier
This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology
down to deep cryogenic temperature, ie, 2.95 K. The impact of the back-gate voltage (V …

Quantum transport in 40-nm MOSFETs at deep-cryogenic temperatures

TY Yang, A Ruffino, J Michniewicz… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at
room and deep cryogenic temperatures, with a focus on quantum information processing …