Abstract β-Ga 2 O 3, a promising ultra-wide bandgap material for future high-power
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …

Sculpting silicon at the micro and nano scales has been game‐changing to mold bulk silicon
properties and expand, in turn, applications of silicon beyond electronics, namely, in …

Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …

Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …

Stacking semiconductor chips allows for increased packing density within a given footprint
and efficient communication between different functional layers of the chip, leading to higher …

Micro/nanoscale structure fabrication is an important process for designing miniaturized
devices. Recently, three-dimensional (3D) integrated circuits using SiO2 via-holes interlayer …

Metal-assisted chemical etching (MACE) has received much attention from researchers
because it can be used to fabricate plasma-free anisotropic etching profiles for …

Metal-assisted chemical etching is a plasma-free open-circuit anisotropic etching method
that produces high aspect ratio structures in various semiconductors. Here, for the first time …

The potentialities of silicon as a starting material for electronic devices are well known and
largely exploited, driving the worldwide spreading of integrated circuits. When …

Metal assisted chemical etching (MACE), as an emerging wet chemical etching method for
fabricating semiconductor micro/nano-structures (MNS), has attracted wide attentions …