Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …

In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …

Simultaneously achieving efficient and stable operation is a major challenge for developing
sustainable and economical solar water-splitting systems. In this work, we demonstrate, for …

AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface
layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high …

Enhanced interband tunnel injection of holes into a pn junction is demonstrated using p-
GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2× 10− 4 Ω cm 2. The …

H2 generation under sunlight offers great potential for a sustainable fuel production system.
To achieve high efficiency solar-to-hydrogen conversion, multijunction photoelectrodes have …

The current LED lighting technology relies on the use of a driver to convert alternating
current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to …

The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …