Prospects and challenges of mini‐LED and micro‐LED displays

Y Huang, G Tan, F Gou, MC Li… - Journal of the Society …, 2019 - Wiley Online Library
We review the emerging mini/micro–light‐emitting diode (LED) displays featuring high
dynamic range and good sunlight readability. For mini‐LED backlit liquid crystal displays …

A brief review of innovative strategies towards structure design of practical electronic display device

L Ma, Y Shao - Journal of Central South University, 2020 - Springer
Display devices have significantly changed our daily life for decades, from the watches,
television, to the laptop and smartphone. As the desire of advanced display device with high …

Revealing the negative capacitance effect in silicon quantum dot light-emitting diodes via temperature-dependent capacitance-voltage characterization

J Mock, M Kallergi, E Groß, M Golibrzuch… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
In this study, quantum dot light-emitting diodes based on non-toxic silicon quantum dots
functionalized with hexyl and dodecyl organic ligands showed a negative capacitance effect …

Impact of Yb, In, Ag and Au thin film substrates on the crystalline nature, Schottky barrier formation and microwave trapping properties of Bi2O3 films

NM Khusayfan, AF Qasrawi, HK Khanfar - Materials Science in …, 2017 - Elsevier
The effect of the Yb, In, Ag and Au thin film metal substrates on the structural and electrical
properties of Bi 2 O 3 thin films are investigated by means of X-ray diffraction, impedance …

Yüksek Lisans Tezi

IIMD İSLAMCILIK, İIM CEMİYETİ - 2008 - search.proquest.com
TC BALIKESİR ÜNİVERSİTESİ SOSYAL BİLİMLER ENSTİTÜSÜ TARİH ANABİLİM DALI II.
MEŞRUTİYET DÖNEMİNDE İSLAMCILIK Page 1 TC BALIKESİR ÜNİVERSİTESİ SOSYAL …

P‐140: The Miniaturization of InGaN/GaN Micro‐LEDs for Micro‐Displays–Size Effects, Frequency Dispersion and Compact Modeling

Y Gong, L Zhang, P Lin, Z Yuan… - … Symposium Digest of …, 2024 - Wiley Online Library
InGaN/GaN green micro‐light‐emitting diode (micro‐LED, μLED) arrays with varying device
sizes down to 4 μm are fabricated and characterized. The size effects on current‐voltage …

Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture

Y Zhang, S Lu, Y Qiu, J Wu, M Zhang, D Luo - Frontiers in Chemistry, 2021 - frontiersin.org
The recent technological trends toward miniaturization in lighting and display devices are
accelerating the requirement for high-performance and small-scale GaN-based light …

[HTML][HTML] GaN 基Micro-LED 量子效率的研究进展

李胜德, 王梓函, 徐京城 - 2023 - snm.usst.edu.cn
微米级发光二极管(Micro light-emitting diode, Micro-LED) 器件具有高亮度, 高耐热性, 长寿命,
低功耗以及极短的响应时间等优点, 被视为下一代显示技术的基石, 可满足手机, 可穿戴手表 …

On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers

V Mikhelashvili, L Gal, G Seri, S Bauer, I Khanonkin… - …, 2023 - degruyter.com
We present a comprehensive study of the temperature dependent electronic and
optoelectronic properties of a tunnelling injection quantum dot laser. The optical power …

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in pin structure

O Özdemir, H Baş, NA Kuruoğlu, K Bozkurt… - Journal of …, 2023 - Elsevier
Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV)
measurements were carried out to detect radiative and non-radiative transitions on …