MXene contact engineering for printed electronics
Z Wu, S Liu, Z Hao, X Liu - Advanced Science, 2023 - Wiley Online Library
MXenes emerging as an amazing class of 2D layered materials, have drawn great attention
in the past decade. Recent progress suggest that MXene‐based materials have been widely …
in the past decade. Recent progress suggest that MXene‐based materials have been widely …
Negative capacitance field effect transistors based on van der Waals 2D materials
RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
Implementation and performance evaluation of ferroelectric negative capacitance FET
With the constant increase in power dissipation of nanoscale transistors, the almost four-
decade-old cycle of performance advancement in complementary metal–oxide …
decade-old cycle of performance advancement in complementary metal–oxide …
A novel negative capacitance FinFET with ferroelectric spacer: proposal and investigation
In this letter, for the first time, we investigate the role of Ferroelectric (FE) spacer in a
negative capacitance (NC) FinFET. Using well-calibrated TCAD models, we found that …
negative capacitance (NC) FinFET. Using well-calibrated TCAD models, we found that …
Performance optimization of analog circuits in negative capacitance transistor technology
Abstract Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging
technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer …
technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer …
Exploration and device optimization of dielectric–ferroelectric sidewall spacer in negative capacitance FinFET
V Chauhan, DP Samajdar… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Gate sidewall spacers, a pathway to the fringing fields, play a crucial role in the device
design. In this article, using well-calibrated TCAD models, we have explored the impact of a …
design. In this article, using well-calibrated TCAD models, we have explored the impact of a …
Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs-A reliability …
Interface traps play a significant role in shaping the performance and reliability of
semiconductor devices, particularly in advanced technologies such as Negative …
semiconductor devices, particularly in advanced technologies such as Negative …
Analysis of performance for novel pocket-doped NCFET under the influence of interface trap charges and temperature variation
B Choudhuri, K Mummaneni - Microelectronics Journal, 2022 - Elsevier
This paper explores the DC characteristics and trap analysis of single gate NCFET (SG-
NCFET) and highly doped double pocket double gate NCFET (HDDP-DG-NCFET) with …
NCFET) and highly doped double pocket double gate NCFET (HDDP-DG-NCFET) with …
Fn-cacti: Advanced cacti for finfet and nc-finfet technologies
DP Ravipati, R Kedia, VM Van Santen… - … Transactions on Very …, 2021 - ieeexplore.ieee.org
Cache memories are an indispensable component of many processor-based systems and
contribute significantly to the overall area, power consumption, and delay. This leads to an …
contribute significantly to the overall area, power consumption, and delay. This leads to an …
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective
Despite the remarkable development in ferroelectric HfO 2-based FETs, key reliability
challenges (eg, retention, endurance, etc.) may still limit their widespread adoption in …
challenges (eg, retention, endurance, etc.) may still limit their widespread adoption in …