Photoluminescence (PL) measurements, performed in Si and Si 1− x Ge x alloys (x= 0.0069
and 0.0125) irradiated with protons and annealed between 100 and 650∘ C, are combined …

The potential configurations of Ge-vacancy pairs in a Ge-doped Czochralski Si (GCz-Si)
crystal have been identified through first-principles theory using a total-energy …

The behavior of as-grown oxygen precipitation in Czochralski (Cz) silicon (Si) with the
germanium (Ge)-doping has been investigated. It is found that the as-grown oxygen …

First-principles, spin-polarized local-density-functional calculations are used to model
interstitial iron (Fe i) and its complexes with substitutional aluminum in dilute Si x Ge 1− x …

Out-diffusion of oxygen during high temperature annealing has been investigated in
Czochralski silicon with germanium doping through the spreading resistance profile and …

The local vibrational modes arising from single interstitial hydrogen centres in Si, Si-rich
SiGe, Ge-rich SiGe, and Ge crystals are modelled by an ab initio supercell method. The …

We report on the vibrational properties of Si1− xGex alloys by means of a pseudopotential
density-functional study. We employ randomly generated supercells, and a wide range of Ge …

C i and C i C s are two main defects produced via the Watkins replacement mechanism
when Si-based materials containing carbon are subjected to particle irradiation. In the …

We have investigated the structural and vibrational properties of interstitial oxygen in Si1−
xGex alloys by using a pseudopotential density-functional code and 128 atom supercells …

Oxygen–carbon defects have been studied for decades in silicon but are less well
established in germanium. In the present study we employ density functional theory …