The evolution of the contact scheme has driven the technology revolution of crystalline
silicon (c‐Si) solar cells. The state‐of‐the‐art high‐efficiency c‐Si solar cells such as silicon …

Graphene is inherently sensitive to vicinal dielectrics and local charge distributions, a
property that can be probed by the position of the Dirac point in graphene field‐effect …

Utilization of highly conductive metal-oxide (MO) film such as indium-tin-oxide (ITO) in a
channel layer has been considered as a promising strategy to realize high-mobility thin-film …

Atomic layer deposited (ALD) Al 2 O 3 films on Cu (In, Ga) Se 2 (CIGS) surfaces have been
demonstrated to exhibit excellent surface passivation properties, which is advantageous in …

We use Silvaco-TCAD tools to optimize ultrathin Cu (In 1-x Ga x) Se 2 solar cells with rear
surface passivation. First of all, the single CIGS structure was performed and calibrated with …

In this work, metal–insulator–semiconductor structures were fabricated in order to study
different types of insulators, namely, aluminum oxide (Al 2 O 3), silicon nitride, and silicon …

Abstract We present a (1-D) SCAPS device model to address the following:(i) the surface
passivation mechanisms (ie field-effect and chemical),(ii) their impact on the CIGS solar cell …

We present a simulation strategy using ATLAS-2D to optimize the back-contact hole grid (ie,
size and pitch of openings) of the Al 2 O 3-rear-passivation layer in ultrathin Cu (In, Ga) Se 2 …

This paper systematically investigates the electrical properties of thin Al 2 O 3/SiO 2 (with a
target equivalent oxide thickness of 4.9 nm) as gate dielectric stack in the metal–oxide …

Several optoelectronic issues, such as poor optical absorption and recombination, limit the
power conversion efficiency of ultrathin Cu (In, Ga) Se2 (CIGS) solar cells. To mitigate …