In-plane optical anisotropy of layered gallium telluride
Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely
high photoresponsivity, short response time, and promising thermoelectric performance …
high photoresponsivity, short response time, and promising thermoelectric performance …
Improving the efficiency of gallium telluride for photocatalysis, electrocatalysis, and chemical sensing through defects engineering and interfacing with its native oxide
Gallium telluride (GaTe) is a van der Waals semiconductor, currently adopted for photonic
and optoelectronic devices. However, the rapid degradation of GaTe in air, promoted by Te …
and optoelectronic devices. However, the rapid degradation of GaTe in air, promoted by Te …
Large-area, high-resolution birefringence imaging with polarization-sensitive Fourier ptychographic microscopy
We present polarization-sensitive Fourier ptychographic microscopy (PS-FPM) capable of
generating high-resolution birefringence images of optically anisotropic specimens over a …
generating high-resolution birefringence images of optically anisotropic specimens over a …
[PDF][PDF] Bandgap restructuring of the layered semiconductor gallium telluride in air
Figure 1a shows the room-temperature, optical absorption spectra of bulk GaTe (p-type, 2.5×
10 16 cm− 3, 20 cm 2 V–1 s–1) with increasing time of exposure to air. For an as-cleaved …
10 16 cm− 3, 20 cm 2 V–1 s–1) with increasing time of exposure to air. For an as-cleaved …
Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets
Layered transition metal trichalcogenides (TMTCs) are a new class of anisotropic two-
dimensional materials that exhibit quasi-1D behavior. This property stems from their unique …
dimensional materials that exhibit quasi-1D behavior. This property stems from their unique …
Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition
We report on the vibrational (Raman) spectrum and structural transformation of
semiconducting pseudo-1D GaTe and ZrTe3 nanomaterials driven by ambient molecular …
semiconducting pseudo-1D GaTe and ZrTe3 nanomaterials driven by ambient molecular …
Analysis of temperature dependent current-voltage characteristics of Sn/p-GaTe/In Schottky diode
In present study, Sn/p-GaTe/In Schottky diode is fabricated using thermal evaporation
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
Thermoelectric properties of two-dimensional gallium telluride
H Shangguan, L Han, T Zhang, R Quhe… - Journal of Electronic …, 2019 - Springer
Phonon, electronic and thermoelectric transport properties of two-dimensional (2D) GaTe
with hexagonal structure and monoclinic structure are investigated by using first-principles …
with hexagonal structure and monoclinic structure are investigated by using first-principles …
Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy
In this work, a model based on the optical rectification effect and the photocurrent surge
effect is proposed to describe the terahertz emission mechanism of the layered GaTe crystal …
effect is proposed to describe the terahertz emission mechanism of the layered GaTe crystal …
Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot
M Gülnahar, H Efeoğlu - Solid-state electronics, 2009 - Elsevier
The current–voltage (I–V) characteristics of Au/p-GaTe Schottky contact were characterized
at 60–300K temperature range and compared with those of Al/p-GaTe. The observed …
at 60–300K temperature range and compared with those of Al/p-GaTe. The observed …