This work studies the use of line-tunnel field effect transistor (Line TFET) devices in analog
applications. It presents the DC and small signal characteristics of these devices and …

The simulation of realistic device models in quantum transport requires an extreme amount
of memory and computation time. The computational burden in quantum transport is caused …

In this paper operational transconductance amplifiers (OTA) were designed with nanowire
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …

Electrical characterization of a silicon nanowire Tunnel Field Effect Transistor (TFET) is used
to construct a lookup table in order to model and simulate analog circuit through Verilog-A …

Abstract An Operational Transconductance Amplifier (OTA) designed with SiGe-source
nanowire Tunnel-FETs is presented and compared with OTAs designed with Si nanowire …

In the recent past, the CMOS technology has been unceasingly scaled down in order to
shrink the device dimensions to the extent of a nanometre regime to enhance the overall …

This paper presents a double‐gate line‐tunneling field‐effect transistor (DGLTFET) device
optimized for superior analog performance. DGLTFET has thrice the on currents I on, at least …

In the recent past, the CMOS technology has been unceasingly scaled down in order to
shrink the device dimensions to the extent of a nanometre regime to enhance the overall …

This work presents the design of Low Dropout Voltage Regulator (LDO) with Line-Tunnel
Field Effect Transistor (Line-TFET), in which the transistor was modeled using Verilog-A and …

This work presents the design of a Gm-C filter using experimental data of a silicon tunneling
field effect transistors (TFET) device. The application takes advantage of the low gm of a Si …