Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

Abstract β-Gallium oxide (β-Ga 2 O 3) has been studied extensively in recent decades due
to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors …

A low temperature controlled annealing technique was utilized to improve the performance
of vertical β-gallium oxide (β-Ga 2 O 3) Schottky barrier diodes (SBDs) in this work. The …

Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …

Chemical and electrical measurements of Ti/(010) β-Ga 2 O 3 and Ti/(001) β-Ga 2 O 3
interfaces were conducted as a function of annealing temperature using x-ray photoelectron …

Nominally phase-pure γ-Ga 2 O 3 was deposited on (100) MgAl 2 O 4 within a narrow
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …

Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic
contact performance for (100)-oriented Ga 2 O 3. A low contact resistance of∼ 2.49× 10− 5 …

In this work, we demonstrate the high performance of β-Ga 2 O 3 metal–insulator–
semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on …