Quantum defects by design

LC Bassett, A Alkauskas, AL Exarhos, KMC Fu - Nanophotonics, 2019 - degruyter.com
Optically active point defects in wide-bandgap crystals are leading building blocks for
quantum information technologies including quantum processors, repeaters, simulators, and …

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

S Castelletto, FA Inam, S Sato… - Beilstein journal of …, 2020 - beilstein-journals.org
Single-photon sources and their optical spin readout are at the core of applications in
quantum communication, quantum computation, and quantum sensing. Their integration in …

Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

JF Wang, FF Yan, Q Li, ZH Liu, H Liu, GP Guo, LP Guo… - Physical review …, 2020 - APS
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence
are ideal platforms for quantum communications and distributed quantum computations. In …

Room-temperature single-photon emitters in silicon nitride

A Senichev, ZO Martin, S Peana, D Sychev, X Xu… - Science …, 2021 - science.org
Single-photon emitters are essential in enabling several emerging applications in quantum
information technology, quantum sensing, and quantum communication. Scalable photonic …

Room temperature optically detected magnetic resonance of single spins in GaN

J Luo, Y Geng, F Rana, GD Fuchs - Nature Materials, 2024 - nature.com
High-contrast optically detected magnetic resonance is a valuable property for reading out
the spin of isolated defect colour centres at room temperature. Spin-active single defect …

Single-photon emission from point defects in aluminum nitride films

Y Xue, H Wang, N Xie, Q Yang, F Xu… - The Journal of …, 2020 - ACS Publications
Quantum technologies require robust and photostable single-photon emitters. Here, room
temperature operated single-photon emissions from isolated defects in aluminum nitride …

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

ME Bathen, L Vines - Advanced Quantum Technologies, 2021 - Wiley Online Library
Point defects in semiconductors are emerging as an important contender platform for
quantum technology (QT) applications, showing potential for quantum computing …

A review of ultrawide bandgap materials: properties, synthesis and devices

M Xu, D Wang, K Fu, DH Mudiyanselage… - Oxford Open …, 2022 - academic.oup.com
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

Deterministic localization of strain-induced single-photon emitters in multilayer GaSe

W Luo, AA Puretzky, BJ Lawrie, Q Tan, H Gao… - Acs …, 2023 - ACS Publications
The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters
(SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum …

[HTML][HTML] Polarization study of single color centers in aluminum nitride

JK Cannon, SG Bishop, JP Hadden, HB Yağcı… - Applied Physics …, 2023 - pubs.aip.org
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum
light source, many of which operate at room temperature. We examine a family of color …