Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …

FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …

We fabricated AlN metal semiconductor field effect transistors (MESFETs) with an epitaxially
grown n-type AlN channel layer and characterized the temperature dependence of their …

Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …

Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

We compare the effectiveness of in situ thermal cleaning with that of Al-assisted cleaning of
native surface oxides of bulk AlN for homoepitaxial growth by molecular beam epitaxy …