Research progress of sol-gel ceramic coating: A review

A Zanurin, NA Johari, J Alias, HM Ayu… - Materials today …, 2022 - Elsevier
The sol–gel method is a simple and low-cost technique that requires low temperature for the
reaction process. Sol-gels can be made from a wide variety of ceramic materials, including …

High-power machines and starter-generator topologies for more electric aircraft: A technology outlook

JK Nøland, M Leandro, JA Suul, M Molinas - IEEE access, 2020 - ieeexplore.ieee.org
More electric aircraft (MEA) architectures consist of several subsystems, which must all
comply with the settled safety requirements of aerospace applications. Thus, achieving …

碳化硅功率器件封装关键技术综述及展望

盛况, 董泽政, 吴新科 - 中国电机工程学报, 2019 - epjournal.csee.org.cn
碳化硅(silicon carbide, SiC) 功率器件作为一种宽禁带器件, 具有耐高压, 高温, 导通电阻低,
开关速度快等优点. 如何充分发挥碳化硅器件的这些优势性能则给封装技术带来了新的挑战 …

Experimental investigation on the transient switching behavior of SiC MOSFETs using a stage-wise gate driver

G Engelmann, T Senoner… - CPSS Transactions on …, 2018 - ieeexplore.ieee.org
A multiple stage gate driver for SiC MOSFETs based on a switched resistor topology is
introduced and a hardware realization is presented. The measurement setup is shown in …

Toward an In-Depth Understanding of the Commutation Processes in a SiC MOSFET Switching Cell Including Parasitic Elements

N Fritz, G Engelmann, A Stippich… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article provides in-depth insight into the commutation processes of high-speed SiC
mosfet s and investigates how they are influenced by various parasitic inductances. The …

Reliability-oriented automated design of double-sided cooling power module: A thermo-mechanical-coordinated and multi-objective-oriented optimization …

Z Zeng, K Ou, L Wang, Y Yu - IEEE transactions on device and …, 2020 - ieeexplore.ieee.org
Compared with the traditional single-sided cooling (SSC) power module, owing to the
decreased thermal resistance and packaging parasitics, the double-sided cooling (DSC) …

Fast and Accurate Parasitic Extraction in Multichip Power Module Design Automation Considering Eddy-Current Losses

Q Le, I Al Razi, TM Evans, S Mukherjee… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
Recent studies in power electronic design automation have introduced various models for
parasitic extraction of multichip power module layouts. However, none of these studies …

Attenuation of conducted EMI for three-level inverters through PWM

J Chen, D Jiang, Q Li - CPSS Transactions on Power …, 2018 - ieeexplore.ieee.org
This paper presents two typical modulations to reduce conducted electromagnetic
interference (EMI) for three-level voltage-source inverters. The first modulation called …

Molecular dynamics simulations of ultrafast radiation induced melting at metal–semiconductor interfaces

A Ravichandran, M Mehta, AA Woodworth… - Journal of Applied …, 2021 - pubs.aip.org
Metal–semiconductor contacts in silicon carbide (SiC) diodes endure damages at the
interface when exposed to harsh radiation environments. Due to the rapid rise in …

Review of the designs in low inductance SiC half‐bridge packaging

H Ma, Y Yang, L Wu, Y Wen, Q Li - IET Power Electronics, 2022 - Wiley Online Library
Silicon carbide (SiC) device has become the primary choice for high‐efficiency power
electronic equipment due to its excellent performance. However, its higher switching …