The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this
work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2 …

The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …

Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

Epitaxy of semiconductor-based quantum well structures is a challenging task since it
requires precise control of the deposition at the submonolayer scale. In the case of Ge1–x …

The local ordering of atoms in alloys directly has a strong impact on their electronic and
optical properties. This is particularly relevant in nonrandom alloys, especially if they are …

As transistors continue to shrink, the need to replace silicon with materials of higher carrier
mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys …

This work introduces a comprehensive simulation tool that provides a robust 1D Schrödinger–
Poisson solver for modeling the electrostatics of heterostructures with an arbitrary number of …

SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect
applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs …