The present status, successes, challenges and future of Ta2O5, and mixed Ta2O5-based
high-k layers as active component in storage capacitors of nanoscale DRAMs are …

Currently, it is generally accepted that the charge transport in dielectrics is limited by the
Coulomb trap ionization in a strong electric field (Frenkel effect). In the present work, the …

A spontaneously formed ZnO/ZnWO x bilayer resistive memory via an interfacial engineering
by one-step sputtering process with controllable high resistance states was demonstrated …

Electrical properties of mixed HfO2–Ta2O5 films (10; 15nm) deposited by rf sputtering on Si
have been studied from the view point of their applications as high-k layers, by standard …

Abstract Effects of postdeposition annealing (PDA) in N 2 O ambient on metal-organic
decomposed CeO 2 films deposited on GaN substrate had been reported. The utilization of …

The charge transport mechanism in amorphous silicon nitride (a-SiN x) is experimentally
analyzed in a wide range of electric fields and temperatures. The Frenkel effect with …

The degradation of Ta2O5-based (10nm) stacked capacitors with different top electrodes,(Al,
W, Au) under constant current stress has been investigated. The variation of electrical …

The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device
with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas …

The effect of compressive mechanical stresses on chip solid tantalum capacitors is
investigated by monitoring the characteristics of different part types under axial and …

A comparison of the effect of rapid thermal nitridation (RTN) of the Si surface in N 2 O and
NH 3 ambient at different temperatures (700–850 C) on the dielectric and electrical …