Sten and related systems and apparatus. The methods include inside-out fill techniques as
well as conformal deposition in features. Inside-out fill techniques can include selective …

Provided herein are methods and apparatuses for filling features metal-containing materials.
One aspect of the dis closure relates to a method for filling structures with a metal-containing …

Described herein are methods of filling features with tung sten, and related systems and
apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods …

Disclosed herein are methods and related apparatus for formation of tungsten wordlines in
memory devices. Also disclosed herein are methods and related apparatus for deposition of …

Aspects of the methods and apparatus described herein relate to deposition of tungsten
nucleation layers and other tungsten-containing films. Various embodiments of the methods …

5,250,467 A 10, 1993 Somekh et al. 7.465, 666 B2 12/2008 Kori et al. 5,308,655 A 5/1994
Eichman et al. 7,501,343 B2 3/2009 Byun et al. 5,326,723. A 7/1994 Petro et al. 7,501,344 …

Ternary tungsten boride nitride (WBN) thin films and related methods of formation are
provided. The films are have excellent thermal stability, tunable resistivity and good …

Provided is a semiconductor device including a substrate with an active pattern, a gate
electrode crossing the active pattern, a source/drain region in an upper portion of the active …

Described herein are methods of filling features with tungsten and related systems and
apparatus. The methods include inside-out fill techniques as well as conformal deposition in …

Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses,
such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in …