Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges
In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …
[PDF][PDF] Comparative evaluation of GaN transistors and Si MOSFETs for use in inductive power transfer systems of biomedical implantable devices
In this work, comparative evaluation of Si MOSFETs and GaN transistors is performed for
utilization in the H-bridge Voltage Source Inverter of Inductive Power Transfer Systems …
utilization in the H-bridge Voltage Source Inverter of Inductive Power Transfer Systems …