The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

The third-generation semiconductors have richer and better properties than traditional
semiconductors, and show promising application prospects in high-power, high …

We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane
sapphire using H 3 PO 4, molten KOH, KOH dissolved in ethylene glycol, and NaOH …

A room-temperature photoelectrochemical etching process for n-type GaN films using a 0.04
M KOH solution and Hg arc lamp illumination is described. The process provides highly …

Gallium nitride is used to fabricate high brightness blue and green light-emitting diodes in
spite of high densities of extended structural defects. We describe a photoelectrochemical …

Klein aber fein! Mikrobauelemente in Form elektronischer Chips sind inzwischen jedermann
ein Begriff. Aber die kleinen Zauberer können mehr. Komplette miniaturisierte Systeme …

A room-temperature photoelectrochemical wet etching process is described that produces
smoothly etched GaN surfaces using KOH solution and Hg arc lamp illumination. Atomic …

In recent years, GaN and related nitride semiconductors have received much attention
regarding their applications in blue-green light emitting diodes (LEDs), laser diodes (LDs) …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

We report a study of the ultraviolet (UV) irradiation effects on the wet chemical etching of
unintentionally doped n-type gallium nitride (GaN) layers grown on sapphire substrates …