Continuum level-set model for anisotropic wet etching of patterned sapphire substrates

A Toifl, F Rodrigues, LF Aguinsky… - Semiconductor …, 2021 - iopscience.iop.org
We present a continuum modeling approach to simulate anisotropic wet etching of single-
crystal sapphire employing mixtures of sulfuric acid and phosphoric acid. Wet etching of …

Simulation-based optimization of out-of-plane, variable-height, convoluted quartz micro needle arrays via single-step anisotropic wet etching

Y Xing, J Qian, MA Gosálvez, J Zhang… - Microelectronic …, 2020 - Elsevier
Abstract Variable-height, out-of-plane, convoluted microneedle arrays with high aspect ratio,
tapered shafts, sharp tips, and smooth surfaces are required for applications where the …

Investigation on spraying pressure in etching process of flexible printed circuit board (FPCB) with 18 μm line pitch

B Sun, D Yu, W Peng, Y Wang, R Ming… - Engineering Research …, 2024 - iopscience.iop.org
In the wet etching process of the flexible printed circuit board (FPCB), to obtain a better
etching profile and improve the yield, it is necessary to control the etching spraying pressure …

[PDF][PDF] Numerical methods for three-dimensional selective epitaxy and anisotropic wet etching simulations

A Toifl - 2021 - scholar.archive.org
The development of semiconductor device fabrication techniques which operate on complex
three-dimensional topographies strongly benefits from technology computer-aided design …

[PDF][PDF] P} arallel {V} elocity {E} xtension and {L} oad-{B} alanced {R} e-{D} istancing on {H} ierarchical {G} rids for {H} igh {P} erformance {P} rocess {T}{C}{A}{D}}

M Quell - 2022 - scholar.archive.org
The continuous developments and miniaturization of manufacturing processes for
semiconductor devices require physical simulations to reduce the number of costly …