Graphene‐based mixed‐dimensional van der Waals heterostructures for advanced optoelectronics
Although the library of 2D atomic crystals has greatly expanded over the past years,
research into graphene is still one of the focuses for both academia and business …
research into graphene is still one of the focuses for both academia and business …
Two-dimensional gallium nitride realized via graphene encapsulation
The spectrum of two-dimensional (2D) and layered materials 'beyond graphene'offers a
remarkable platform to study new phenomena in condensed matter physics. Among these …
remarkable platform to study new phenomena in condensed matter physics. Among these …
[PDF][PDF] Graphene-based LED: From principle to devices
Group-III nitride (III-N) films have numerous applications in LEDs, lasers, and high-
power/high-frequency electronic devices because of their direct wide band gap, high …
power/high-frequency electronic devices because of their direct wide band gap, high …
Improved epitaxy of AlN film for deep‐ultraviolet light‐emitting diodes enabled by graphene
The growth of single‐crystal III‐nitride films with a low stress and dislocation density is
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …
Progress in tandem solar cells based on hybrid organic–inorganic perovskites
Owing to their high efficiency, low‐cost solution‐processability, and tunable bandgap,
perovskite solar cells (PSCs) made of hybrid organic‐inorganic perovskite (HOIP) thin films …
perovskite solar cells (PSCs) made of hybrid organic‐inorganic perovskite (HOIP) thin films …
新型石墨烯基LED 器件: 从生长机理到器件特性
陈召龙, 高鹏, 刘忠范 - 物理化学学报, 2019 - whxb.pku.edu.cn
Ⅲ 族氮化物因具有禁带宽度大, 击穿电压高, 电子饱和漂移速度大, 稳定性高等优异特性而广泛
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …
Two-dimensional van der Waals epitaxy kinetics in a three-dimensional perovskite halide
The exploration of emerging materials physics and prospective applications of two-
dimensional materials greatly relies on the growth control of their thickness, phases …
dimensional materials greatly relies on the growth control of their thickness, phases …
High‐brightness blue light‐emitting diodes enabled by a directly grown graphene buffer layer
Single‐crystalline GaN‐based light‐emitting diodes (LEDs) with high efficiency and long
lifetime are the most promising solid‐state lighting source compared with conventional …
lifetime are the most promising solid‐state lighting source compared with conventional …
Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
H Chang, Z Chen, W Li, J Yan, R Hou, S Yang… - Applied Physics …, 2019 - pubs.aip.org
We report the growth of high-quality AlN films on nano-patterned sapphire substrates
(NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid …
(NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid …