N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …
attracted growing interest due to its promising applications in data storage and in‐memory …
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence
Almost all electronic devices utilize a pn junction formed by random doping of donor and
acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed …
acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed …
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
The concept and simulated device characteristics of tunneling field-effect transistors (TFETs)
based on III-nitride heterojunctions are presented for the first time. Through polarization …
based on III-nitride heterojunctions are presented for the first time. Through polarization …
Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy
Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
Graded strain-enhanced pyro-phototronic photodetector with a broad and plateau band
L Wang, H Xue, M Zhu, Y Gao, Z Wang - Nano Energy, 2022 - Elsevier
Self-powered broadband photodetectors (PDs) have important applications in the field of
communication, sensing, imaging and Internet of thing. However, it is a great challenge to …
communication, sensing, imaging and Internet of thing. However, it is a great challenge to …
High p-conductivity in AlGaN enabled by polarization field engineering
High p-conductivity (0.7 Ω− 1 cm− 1) was achieved in high-Al content AlGaN via Mg doping
and compositional grading. A clear transition between the valence band and impurity band …
and compositional grading. A clear transition between the valence band and impurity band …