Recent developments in phase‐change memory
A Ehrmann, T Blachowicz, G Ehrmann… - Applied …, 2022 - Wiley Online Library
Phase‐change memory (PCM) belongs to the nonvolatile solid‐state memory techniques.
Usually, a chalcogenide is sandwiched between two conductive electrodes and data are …
Usually, a chalcogenide is sandwiched between two conductive electrodes and data are …
Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
One central task of developing nonvolatile phase change memory (PCM) is to improve its
scalability for high‐density data integration. In this work, by first‐principles molecular …
scalability for high‐density data integration. In this work, by first‐principles molecular …
Thermoelectric characteristics of n-type Bi2Te3 and p-type Sb2Te3 thin films prepared by co-evaporation and annealing for thermopile sensor applications
JH Kim, JY Choi, JM Bae, MY Kim, TS Oh - Materials Transactions, 2013 - jstage.jst.go.jp
Recently, a large number of studies have focused on the development of micro thermal
sensors which convert heat energies generated by various physical signals and chemical …
sensors which convert heat energies generated by various physical signals and chemical …
Towards antimonene and 2D antimony telluride through electrochemical exfoliation
Abstract Two‐dimensional (2D) layered antimony (Sb) and antimony telluride (Sb2Te3) are
two valuable materials for optoelectronic devices and thermoelectric applications. Preparing …
two valuable materials for optoelectronic devices and thermoelectric applications. Preparing …
Ultra-low energy phase change memory with improved thermal stability by tailoring the local structure through Ag doping
Although Sb2Te3, as a candidate material for next-generation memory devices, has
attractive properties such as higher operation speed and lower power consumption than …
attractive properties such as higher operation speed and lower power consumption than …
Minimum voltage for threshold switching in nanoscale phase-change memory
The size scaling of the threshold voltage required for the amorphous-to-crystalline transition
in phase-change memory (PCM) is investigated using planar devices incorporating …
in phase-change memory (PCM) is investigated using planar devices incorporating …
Transport properties of amorphous antimony telluride
SA Baily, D Emin - Physical Review B—Condensed Matter and Materials …, 2006 - APS
The electrical conductivity, Seebeck coefficient, and Hall coefficient of micron thick films of
amorphous Sb 2 Te 3 have been measured as functions of temperature from room …
amorphous Sb 2 Te 3 have been measured as functions of temperature from room …
Hall mobility of amorphous Ge2Sb2Te5
SA Baily, D Emin, H Li - Solid state communications, 2006 - Elsevier
The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick
films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room …
films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room …
Ex situ photoelectron emission microscopy of polycrystalline bismuth and antimony telluride surfaces exposed to ambient oxidation
The surfaces of textured polycrystalline N-type bismuth telluride and P-type antimony
telluride materials were investigated using ex situ photoelectron emission microscopy …
telluride materials were investigated using ex situ photoelectron emission microscopy …
Crystallization and C-RAM application of Ag-doped Sb2Te3 material
J Xu, B Liu, Z Song, S Feng, B Chen - Materials Science and Engineering: B, 2006 - Elsevier
Ag-doped amorphous Sb2Te3 thin films are deposited by RF magnetron sputtering and the
crystallization behavior is studied by differential scanning calorimeter (DSC), X-ray …
crystallization behavior is studied by differential scanning calorimeter (DSC), X-ray …