The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP,
InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and …

This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

Results of the experimental determination of the threshold voltage of pore formation for n-InP
(100) crystals with a charge-carrier density of 2.3× 10 18 cm− 3 are presented. The threshold …

The samples of porous InP were grown up by a method of anode etching on a substrate
(100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) …

In this paper, a review on electrochemical porous etching of semiconductors is proposed.
After a brief history, chemical and electrochemical etching of semiconductors are considered …

В книге обобщаются результаты исследований технологии получения и свойств
гетероструктур на основе четверных и пятерных твердых растворов соединений …

The anodic behavior of III–V crystals in electrolyte solutions was experimentally studied. The
dependences of the pore-formation threshold voltage on the semiconductor composition …

The present work deals with the electrochemical formation of superlattice structures on n-
type (100) InP in HCl solutions. The superlattices consist of a stack of two layers with …

For the first time, pore formation on (100) has been carried out by galvanostatic treatments in
acidic liquid ammonia at. Voltage oscillations correlated to a specific current line oriented …

Abstract n-Type GaP was anodized in bromide-ion-containing solutions. In these solutions
pores can be grown into the GaP substrate with morphologies that depend strongly on the …