Understanding the mechanical behavior of silicon nanowires is essential for the
implementation of advanced nanoscale devices. Although bending tests are predominantly …

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their
successful utilization as transducer building blocks in next-generation, miniaturized sensors …

Nanowires play a pivotal role across a spectrum of disciplines such as
nanoelectromechanical systems, nanoelectronics, and energy applications. As nanowires …

The mechanical properties characterization of silicon nanowires is generally performed by
tensile nanomechanical loading tests with in situ strain quantification. While the strain is …

Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet
(NS) transistors technology, while it is a big challenge to be realized on nanometer-sized …

In this work, we aim to fabricate strained silicon nanowires (sSiNWs) to study their electric
mobility and giant piezoresistance. Through techniques compatible with the CMOS …

The silicon nanowire (SiNW) is poised to become an industry standard on the upcoming
technological nodes. It presents improved current drive and modulation, minimized footprint …

In this work, we aim to fabricate strained silicon nanowires (sSiNWs) to study electric mobility
and giant piezoresistance. Through techniques compatible with the CMOS technology …