FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Gate oxide induced reliability assessment of junctionless FinFET-based hydrogen gas sensor
Gate oxide plays a crucial role in the performance of nano-scaled emerging devices. In FET-
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance
Non-quasi-static small-signal models are essential for exploring the high-frequency (HF)
behavior of the FinFET. In this paper, we propose a modified small-signal model for a multi …
behavior of the FinFET. In this paper, we propose a modified small-signal model for a multi …
Optimizing device dimensions for dual material junctionless tree-FET: a path to improved analog/RF performance
D Beebireddy, K Fatima - ECS Journal of Solid State Science …, 2024 - iopscience.iop.org
This comprehensive study delves into the intricate analysis of the electrical and analog/RF
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor
This work demonstrates the reliability-aware analysis of the Junctionless negative
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants
The CMOS compatibility of Negative Capacitance (NC) FETs has been enhanced
tremendously after introducing a thin film-doped HfO 2 as a ferroelectric (FE) layer. For a …
tremendously after introducing a thin film-doped HfO 2 as a ferroelectric (FE) layer. For a …
Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications
TT Cheng, Q Li, YX Yang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
As the negative capacitance field-effect transistors (NCFETs) have extensive application
prospects and advanced technological support in the analog/radio-frequency (RF) domains …
prospects and advanced technological support in the analog/radio-frequency (RF) domains …