Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …

The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …

In this paper, we carried out a systematic investigation on gate degradation and the physical
mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated
AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an
enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the …