Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

The electronic conductivities of ferroelectric domain walls have been extensively explored
over the past decade for potential nanoelectronic applications. However, the realization of …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

Piezoresponse force microscopy (PFM) is widely used for characterization and exploration
of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is …

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which
shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are …

Interfacial 'dead'layers between metals and ferroelectric thin films generally induce
detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous …

Direct data processing in nonvolatile memories can enable area‐and energy‐efficient
computation, unlike independent performance between separate processing and memory …

Ferroelectric domain walls provide a fertile environment for novel materials physics. If a
polarization discontinuity arises, it can drive a redistribution of electronic carriers and …

Recently, electrically conducting heterointerfaces between dissimilar band insulators (such
as lanthanum aluminate and strontium titanate) have attracted considerable research …