A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range,
which is based upon an amplifying metasurface reflector composed of a sub-wavelength …

We present both theoretical and experimental results on the intersubband resonance in
InAs/AlSb quantum wells. From a Kane (k⋅ p) description of the band structure we …

In this work, optical intersubband transitions in conduction-band quantum wells have been
reexamined in the multiband scheme. A generalized theory, with emphasis on the selection …

Second-and third-harmonic generation are observed in a semiconductor heterostructure
which approximates a two-state system with an 11-meV level spacing. A resonance in the …

We report on the analysis of thermally-limited operation of quantum-dot infrared
photodetectors (QDIPs). A device model is developed and used to calculate the QDIP …

Design, modeling, and optimization principles for Ga As∕ Al Ga As heterojunction interfacial
workfunction internal photoemission (HEIWIP) infrared detectors for a broad spectral region …

The eight-band superlattice crystal K· p formalism is extended to include the higher-lying
antibonding p states perturbatively. The initial 14× 14 Hamiltonian matrix is block …

accepted for publication December 8, 1995) We report intersubband transitions in
InGaAs/AlAs quantum wells on GaAs substrate. The intersubband-transition wavelength and …

We present the results of a new self-consistent analytical model for the calculation of the
dark current and the electric-field and space-charge distributions in quantum well infrared …

In this article the authors report on a novel material system for optoelectronic intersubband
devices. Superlattices of In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 were grown by molecular …