Magnetic reflectometry of heterostructures

S Macke, E Goering - Journal of Physics: Condensed Matter, 2014 - iopscience.iop.org
Measuring the magnetic configuration at complex buried layers and interfaces is an
important task, which requires especially a non-destructive probing technique. X-ray …

Chemically Stable Atomic-Layer-Deposited Al2O3 Films for Processability

M Broas, O Kanninen, V Vuorinen, M Tilli… - ACS …, 2017 - ACS Publications
Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and
functional purposes in electronics. In all cases, the deposited film is usually expected to …

Corrosion protection of steel with multilayer coatings: Improving the sealing properties of physical vapor deposition CrN coatings with Al2O3/TiO2 atomic layer …

J Leppäniemi, P Sippola, M Broas, J Aromaa… - Thin Solid Films, 2017 - Elsevier
Abstract Atomic Layer Deposition (ALD) of Al 2 O 3/TiO 2 nanolaminate was applied to
improve the sealing properties of CrN coating deposited with Physical Vapor Deposition …

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

L Gillan, S Li, J Lahtinen, CH Chang… - Advanced Materials …, 2021 - Wiley Online Library
Additive solution process patterning, such as inkjet printing, is desirable for high‐throughput
roll‐to‐roll and sheet fabrication environments of electronics manufacturing because it can …

Comparing magnetic ground-state properties of the V- and Cr-doped topological insulator

A Tcakaev, VB Zabolotnyy, RJ Green, TRF Peixoto… - Physical Review B, 2020 - APS
An insulating ferromagnetic ground state is a fundamental prerequisite for the quantum
anomalous Hall (QAH) effect observed in magnetically doped topological insulators such as …

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

M Broas, P Sippola, T Sajavaara, V Vuorinen… - Journal of vacuum …, 2016 - pubs.aip.org
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films
on Si from trimethylaluminum and N 2: H 2 plasma at 200 C. Thermal treatments were then …

Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

V Rontu, P Sippola, M Broas, G Ross… - Journal of Vacuum …, 2018 - pubs.aip.org
The atomic layer deposition (ALD) of AlN from AlCl 3 was investigated using a thermal
process with NH 3 and a plasma-enhanced (PE) ALD process with Ar/NH 3 plasma. The …

Advanced data analysis procedure for hard x-ray resonant magnetic reflectivity discussed for Pt thin film samples of various complexity

J Krieft, D Graulich, A Moskaltsova… - Journal of Physics D …, 2020 - iopscience.iop.org
X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical,
structural and magnetic depth profiles of a variety of thin film systems. Here, we investigate …

Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100 C for moisture barrier …

Z Zhu, P Sippola, H Lipsanen, H Savin… - Japanese Journal of …, 2018 - iopscience.iop.org
We report the effect of plasma parameters on the properties of ultrathin Al 2 O 3 films
prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The …

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

M Putkonen, P Sippola, L Svärd… - … of the Royal …, 2018 - royalsocietypublishing.org
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2
using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to …