Magnetic reflectometry of heterostructures
S Macke, E Goering - Journal of Physics: Condensed Matter, 2014 - iopscience.iop.org
Measuring the magnetic configuration at complex buried layers and interfaces is an
important task, which requires especially a non-destructive probing technique. X-ray …
important task, which requires especially a non-destructive probing technique. X-ray …
Chemically Stable Atomic-Layer-Deposited Al2O3 Films for Processability
M Broas, O Kanninen, V Vuorinen, M Tilli… - ACS …, 2017 - ACS Publications
Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and
functional purposes in electronics. In all cases, the deposited film is usually expected to …
functional purposes in electronics. In all cases, the deposited film is usually expected to …
Corrosion protection of steel with multilayer coatings: Improving the sealing properties of physical vapor deposition CrN coatings with Al2O3/TiO2 atomic layer …
J Leppäniemi, P Sippola, M Broas, J Aromaa… - Thin Solid Films, 2017 - Elsevier
Abstract Atomic Layer Deposition (ALD) of Al 2 O 3/TiO 2 nanolaminate was applied to
improve the sealing properties of CrN coating deposited with Physical Vapor Deposition …
improve the sealing properties of CrN coating deposited with Physical Vapor Deposition …
Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation
Additive solution process patterning, such as inkjet printing, is desirable for high‐throughput
roll‐to‐roll and sheet fabrication environments of electronics manufacturing because it can …
roll‐to‐roll and sheet fabrication environments of electronics manufacturing because it can …
Comparing magnetic ground-state properties of the V- and Cr-doped topological insulator
An insulating ferromagnetic ground state is a fundamental prerequisite for the quantum
anomalous Hall (QAH) effect observed in magnetically doped topological insulators such as …
anomalous Hall (QAH) effect observed in magnetically doped topological insulators such as …
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films
on Si from trimethylaluminum and N 2: H 2 plasma at 200 C. Thermal treatments were then …
on Si from trimethylaluminum and N 2: H 2 plasma at 200 C. Thermal treatments were then …
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
The atomic layer deposition (ALD) of AlN from AlCl 3 was investigated using a thermal
process with NH 3 and a plasma-enhanced (PE) ALD process with Ar/NH 3 plasma. The …
process with NH 3 and a plasma-enhanced (PE) ALD process with Ar/NH 3 plasma. The …
Advanced data analysis procedure for hard x-ray resonant magnetic reflectivity discussed for Pt thin film samples of various complexity
J Krieft, D Graulich, A Moskaltsova… - Journal of Physics D …, 2020 - iopscience.iop.org
X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical,
structural and magnetic depth profiles of a variety of thin film systems. Here, we investigate …
structural and magnetic depth profiles of a variety of thin film systems. Here, we investigate …
Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100 C for moisture barrier …
Z Zhu, P Sippola, H Lipsanen, H Savin… - Japanese Journal of …, 2018 - iopscience.iop.org
We report the effect of plasma parameters on the properties of ultrathin Al 2 O 3 films
prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The …
prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The …
Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils
M Putkonen, P Sippola, L Svärd… - … of the Royal …, 2018 - royalsocietypublishing.org
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2
using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to …
using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to …