Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate
We report MOCVD-grown Al 0.87 Ga 0.13 N/Al 0.64 Ga 0.36 N metal-oxide-semiconductor-
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …
Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors
Incorporating inhibition dynamics for the first time, in this work, we successfully model the
trapping and detrapping kinetics under positive and negative bias stress in 4H-SiC MOS …
trapping and detrapping kinetics under positive and negative bias stress in 4H-SiC MOS …