Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Progress and future prospects of negative capacitance electronics: A materials perspective
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …
the power dissipation of electronics beyond fundamental limits. The discovery of …
Recent advances in negative capacitance FinFETs for low-power applications: a review
V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO 2 gate
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
Proposal for capacitance matching in negative capacitance field-effect transistors
Negative-capacitance transistors use ferroelectric (FE) material in the gate-stack to improve
the transistor performance. The extent of the improvement depends on the capacitance …
the transistor performance. The extent of the improvement depends on the capacitance …
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory
technology due to its promising operating speed and endurance. However, flipping the …
technology due to its promising operating speed and endurance. However, flipping the …
Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2
Al 0.68 Sc 0.32 N (AlScN) has gained attention for its outstanding ferroelectric properties,
including a high coercive field and high remnant polarization. Although AlScN-based …
including a high coercive field and high remnant polarization. Although AlScN-based …
Exploration of negative capacitance in gate-all-around Si nanosheet transistors
Gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs) are the most promising
candidates to replace FinFETs and nanowire (NW) FETs in future technology nodes owing …
candidates to replace FinFETs and nanowire (NW) FETs in future technology nodes owing …
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET
Temperature plays a decisive role in semiconductor device performance and reliability
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
Analog/RF and linearity performance assessment of a negative capacitance FinFET using high threshold voltage techniques
The continued exploration of the ferroelectric-based negative capacitance field effect
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …