Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

D Pierścińska - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …

[PDF][PDF] Analysis of free-space optics development

J Mikołajczyk, Z Bielecki, M Bugajski… - Metrology and …, 2017 - bibliotekanauki.pl
The article presents state of work in technology of free-space optical communications (Free
Space Optics-FSO). Both commercially available optical data links and their further …

External fields controlling the nonlinear optical properties of quantum cascade laser based on staircase-like quantum wells

H Dakhlaoui, JA Vinasco, CA Duque - Superlattices and Microstructures, 2021 - Elsevier
In this paper, we present a theoretical investigation of nonlinear optical properties of Al x Ga
1-x As-GaAs staircase-like quantum wells heterostructure under the effects of electric …

Optical and electronic transport properties of epitaxial InGaAs and InAlAs in multilayer stacks

MK Mainali, I Subedi, DV Forbes, SM Hubbard… - Journal of Materials …, 2023 - Springer
The complex dielectric function (ε= ε 1+ iε 2) spectra of epitaxial In0. 53Ga0. 47As and In0.
52Al0. 48As in multilayer stacks were extracted by spectroscopic ellipsometry. Unlike …

Interface tomography of GaInAs/AlInAs quantum cascade laser active regions

E Paysen, S Schütt, S Michler, Q Yang… - Semiconductor …, 2023 - iopscience.iop.org
We present a high-resolution electron tomography study of buried ultra-thin layers and their
interfaces from the active region of a (Ga, In) As/(Al, In) As quantum cascade laser (QCL) test …

Butt-coupling of 4.5 μm quantum cascade lasers to silica hollow core anti-resonant fibers

K Pierściński, G Stępniewski, M Klimczak… - Journal of Lightwave …, 2021 - opg.optica.org
We report on experimental characterization of butt-coupling between a quantum cascade
laser operating around the wavelength of 4.5 μm and a silica hollow core anti-resonant fiber …

InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Z Yang, S Ma, Y Shi, S Yuan, L Shang, X Hao… - Materials Science in …, 2024 - Elsevier
The refinement of interface structure in InGaAs/AlGaAs multiple quantum wells (MQWs)
through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence …

MBE growth and optimization of the InGaAs/InAlAs materials system for quantum cascade laser

W Tian, D Zhang, X Zheng, R Yang, Y Liu, L Lu… - Frontiers in …, 2022 - frontiersin.org
High material quality is the foundation for the excellent performance of quantum cascade
lasers. This paper investigates the growth conditions for InGaAs/InAlAs/InP superlattices …

Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

P Gutowski, I Sankowska, T Słupiński, D Pierścińska… - Materials, 2019 - mdpi.com
We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In0.
52Al0. 48As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The …

[HTML][HTML] Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

S Zhang, L Zhu, D Zhang, X Zheng, J Cui, R Gong… - Vacuum, 2024 - Elsevier
GaInAs/AlInAs superlattice play an important role in the epitaxial structure of mid-wave
infrared quantum cascade lasers. This paper find the optimal deoxidation temperature point …