Current Status of Carbon‐Related Defect Luminescence in GaN
F Zimmermann, J Beyer, C Röder… - … status solidi (a), 2021 - Wiley Online Library
Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic
devices. For this purpose, carbon doping is one of the currently pursued approaches …
devices. For this purpose, carbon doping is one of the currently pursued approaches …
Investigation of leakage current paths in n-GaN by conductive atomic force microscopy
We have investigated electrical characteristics of leakage current paths in n-GaN layer
grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy …
grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy …
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
DG Zhao, DS Jiang, H Yang, JJ Zhu, ZS Liu… - Applied physics …, 2006 - pubs.aip.org
We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative
intensity of yellow luminescence increases as the full width at half maximum of the x-ray …
intensity of yellow luminescence increases as the full width at half maximum of the x-ray …
Physical insights into electron trapping mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance
In this work, a well-calibrated computational framework is used to probe the physical
mechanisms leading to electron trapping in the carbon-doped GaN buffer in AlGaN/GaN …
mechanisms leading to electron trapping in the carbon-doped GaN buffer in AlGaN/GaN …
Photocatalytic activity of gallium nitride for producing hydrogen from water under light irradiation
Photocatalytic activity of powdered GaN for decomposing water into hydrogen under light
irradiation was investigated. It was found that GaN has activity for producing hydrogen from …
irradiation was investigated. It was found that GaN has activity for producing hydrogen from …
Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence
M Julkarnain, N Kamata, T Fukuda, Y Arakawa - Optical Materials, 2016 - Elsevier
The below-gap emission components including yellow luminescence (YL) band of an
MOCVD grown undoped GaN have been studied by the two-wavelength-excited …
MOCVD grown undoped GaN have been studied by the two-wavelength-excited …
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
A Hospodková, M Nikl, O Pacherová, J Oswald… - …, 2014 - iopscience.iop.org
Abstract We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic
vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its …
vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its …
Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures
In this report, electrical characteristics of the Ni/GaN Schottky barrier diode grown on
sapphire have been investigated in the range of 20 K–300 K, using current–voltage …
sapphire have been investigated in the range of 20 K–300 K, using current–voltage …
Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
Growth of gallium nitride (GaN) on strain relaxed nanoporous GaN template by metal-
organic chemical vapor deposition has produced GaN layer with 60% reduction in threading …
organic chemical vapor deposition has produced GaN layer with 60% reduction in threading …
Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy
TT Duc, G Pozina, E Janzén… - Journal of Applied …, 2013 - pubs.aip.org
Electron traps in thick free standing GaN grown by halide vapor phase epitaxy were
characterized by deep level transient spectroscopy. The measurements revealed six …
characterized by deep level transient spectroscopy. The measurements revealed six …