This paper presents the results of comparative reliability study of two accelerated ageing
tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air–air test) …

The effect of the source field plate architecture on the static and dynamic electrical
performances of SOI LDMOS transistors for RF applications is analysed in this paper. Three …

This paper presents a synthesis of hot-electron effects on power RF LDMOS performances,
after accelerated ageing tests with electrical and/or thermal stress. Which can modify and …

The thermal behavior analysis is undoubtedly the main concern when studying
semiconductor devices' and structures' physical mechanics. To the best of our knowledge …

This paper describes a new methodology to initiate a thermal accelerated aging test, and
identify the key parameters affecting the reliability of a power RF N-LDMOS transistor. The …

In this article, an RD (Retrograde drift) LDMOS (Lateral double diffused metal oxide
semiconductor) device is introduced. The drift region in this proposed device is trapezoidal …

The benefits of applying the shallow trench isolation (STI) concept to a higher voltage thin-
SOI laterally diffused metal oxide semiconductor (LDMOS)(in the range of 80 V) are …

This paper focuses on exploring the correlation between electrical parameters shift of a
power RF N-LDMOS transistor and the failure phenomenon that appeared after the …

An innovative reliability test bench dedicated to RF power devices is currently implemented.
This bench allows to apply both electric and thermal stress for lifetime test under radar …

This study presents firstly, experimental results through an innovative reliability bench of
pulsed RF life test in a radar application for device lifetime under pulse conditions, then the …