Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch… - Journal of Applied …, 2011 - pubs.aip.org
By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
High efficient degradation of dye molecules by PDMS embedded abundant single-layer tungsten disulfide and their antibacterial performance
S Masimukku, YC Hu, ZH Lin, SW Chan, TM Chou… - Nano Energy, 2018 - Elsevier
This work, we achieved the first-ever demonstration in the polydimethylsiloxane embedded
with the abundant single-layer tungsten disulfide (WS 2) nanoflowers (PDMS/WS 2 NFs) for …
with the abundant single-layer tungsten disulfide (WS 2) nanoflowers (PDMS/WS 2 NFs) for …
[HTML][HTML] Multifunctional graphene/POSS epoxy resin tailored for aircraft lightning strike protection
M Raimondo, L Guadagno, V Speranza… - Composites Part B …, 2018 - Elsevier
This paper presents a first successful attempt to obtain a conductivity mapping at nanoscale
level of a new multifunctional fire retardant graphene/polyhedral oligomeric silsesquioxane …
level of a new multifunctional fire retardant graphene/polyhedral oligomeric silsesquioxane …
The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2
The diffusion and segregation of oxygen vacancies near a grain boundary in m-HfO 2 is
investigated by first principles calculations. We find that both neutral and positive vacancies …
investigated by first principles calculations. We find that both neutral and positive vacancies …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
Transparent High‐Performance Thin Film Transistors from Solution‐Processed SnO2/ZrO2 Gel‐like Precursors
J Jang, R Kitsomboonloha, SL Swisher… - Advanced …, 2013 - Wiley Online Library
Transparent electronics is expected to address a significant problem in virtually all flat panel
displays. In current display technologies, which emit light through a transparent glass …
displays. In current display technologies, which emit light through a transparent glass …
Grain boundary mediated leakage current in polycrystalline HfO2 films
In this work, we combine conductive atomic force microscopy (CAFM) and first principles
calculations to investigate leakage current in thin polycrystalline HfO 2 films. A clear …
calculations to investigate leakage current in thin polycrystalline HfO 2 films. A clear …
Grain boundary-driven leakage path formation in HfO2 dielectrics
The evolution over time of the leakage current in HfO2-based MIM capacitors under
continuous or periodic constant voltage stress (CVS) was studied for a range of stress …
continuous or periodic constant voltage stress (CVS) was studied for a range of stress …