Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …

n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …

Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the
most promising material for the realization of a Si-compatible THz quantum cascade laser …

We report an extensive study of strained Ge/Si 0.2 Ge 0.8 multiquantum wells grown by
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …

High-quality n-type continuously graded Ge-rich Si 1− x Ge x parabolic quantum wells with
different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on …

The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers
has enabled the integration of multi-quantum well structures in silicon photonics chips for …

We analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge
0.82 Si 0.18 multiquantum wells grown on Si (001) substrates. Supported by a thorough …

Mid-infrared intersubband absorption from p-Ge quantum wells with Si 0.5 Ge 0.5 barriers
grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature …

In this paper we present a detailed study of the intersubband absorption occurring between
electron states confined in strained Ge multi-quantum wells as a function of the temperature …