The electron mobility anisotropy in (Al, Ga) Sb/InAs two-dimensional electron gases with
different surface morphology has been investigated. Large electron mobility anisotropy is …

The resistance across a step on ultrathin films of three different topological insulators, Bi 2
Te 3, Bi 2 Se 3, and (Bi 1− x Pb x) 2 Te 3, was measured through anisotropy in two …

We report on the postgrowth shaping of free-standing two-dimensional (2D) InAs nanofins
that are grown by selective-area epitaxy and mechanically transferred to a separate …

The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in
AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during …

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors
(HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been …

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by
molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al 0.75 Ga …

Electron transport properties in InAs films epitaxially grown on GaAs (001), InAs/GaAs (001)
heterostructures, were systematically investigated through the dependence on crystal …

Free standing 3C–SiC (111) samples with differently oriented twin boundaries were
prepared using on-axis and slightly off-axis 6H–SiC substrates. The orientation of twin …

A new method for avoiding air exposure of the mesa-floor during processing of shallow-
mesa InAs/AlSb HEMTs is reported. The method is based on the in situ chemical vapor …

Abstract Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW
FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular …