Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application
Wurtzite BAlN alloy with large bandgap is an emerging material system for UV
optoelectronic and power devices. In this study, the BAlN/GaN heterojunction with a sharp …
optoelectronic and power devices. In this study, the BAlN/GaN heterojunction with a sharp …
Ab Initio Prediction of Ultra‐Wide Band Gap BxAl1−xN Materials
Ultra‐wide bandgap (UWBG) materials are poised to play an important role in the future of
power electronics. Devices made from UWBG materials are expected to operate at higher …
power electronics. Devices made from UWBG materials are expected to operate at higher …
[HTML][HTML] Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition
Wurtzite BAlN alloys are emerging ultrawide bandgap III-nitride semiconductors promising
for optical and electronic devices. Yet the boron compositions of the grown alloys have been …
for optical and electronic devices. Yet the boron compositions of the grown alloys have been …
Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications
The optical properties of BAlN, BGaN and AlGaN ternary alloys are investigated using hybrid
density functional for the design of lattice-matched optical structures in the ultraviolet …
density functional for the design of lattice-matched optical structures in the ultraviolet …
Electronic Properties of BAlN Computed from GW Simulations
Ultra-wide bandgap (UWBG) materials such as AlN and BN hold great promise for future
power electronics due to their exceptional properties. They exhibit large band gaps, high …
power electronics due to their exceptional properties. They exhibit large band gaps, high …
BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures
Emerging wide bandgap BAlN alloys have potential for improved III-nitride power devices,
including high electron mobility transistors (HEMTs). Yet, few relevant studies have been …
including high electron mobility transistors (HEMTs). Yet, few relevant studies have been …
Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
In this work, the local atomic level composition of BAlN films with∼ 20% B was investigated
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional
AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously …
AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously …