[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
High RF performance GaN-on-Si HEMTs with passivation implanted termination
This work reports recent progress in the sub-6 GHz power performance of GaN-based
HEMTs grown on high resistivity silicon substrates with passivation implanted termination …
HEMTs grown on high resistivity silicon substrates with passivation implanted termination …
Compensation dopant-free GaN-on-Si HEMTs with a polarization engineered buffer for RF applications
A Gowrisankar, VS Charan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report on the performance of compensation doping-free aluminum gallium-nitride
(AlGaN)/gallium-nitride (GaN) high-electron mobility transistors (HEMTs) realized using a …
(AlGaN)/gallium-nitride (GaN) high-electron mobility transistors (HEMTs) realized using a …
Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application
Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk
of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using …
of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using …
High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for -Band Applications
A Eblabla, X Li, I Thayne, DJ Wallis… - IEEE Electron …, 2015 - ieeexplore.ieee.org
This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT
realized on a 150-mm diameter low-resistivity (LR)(σ<; 10 Ω· cm) silicon substrate. Short …
realized on a 150-mm diameter low-resistivity (LR)(σ<; 10 Ω· cm) silicon substrate. Short …
High power K-band GaN on SiC CPW monolithic power amplifier
O Cengiz, O Sen, E Ozbay - 2014 44th European Microwave …, 2014 - ieeexplore.ieee.org
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN
CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC …
CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC …
Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si
power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka …
power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka …
A 1.5 KW L-Band All GaN High-Efficiency Solid State Power Amplifier for Pulsed Applications
AME Abounemra, NO Parchin… - 2023 International …, 2023 - ieeexplore.ieee.org
This paper describes the design and fabrication of a 1500 watts multi-stage L-band RF solid-
state power amplifier (SSPA). The basic approach is to use 50-volt Gallium Nitride High …
state power amplifier (SSPA). The basic approach is to use 50-volt Gallium Nitride High …
Measurement of the energy asymmetry in ttj production at 13 TeV with the ATLAS experiment and interpretation in the SMEFT framework
A Collaboration - Eur. Phys. J. C, 2022 - ruj.uj.edu.pl
A measurement of the energy asymmetry in jet-associated top-quark pair production is
presented using 139 fb of data collected by the ATLAS detector at the Large Hadron Collider …
presented using 139 fb of data collected by the ATLAS detector at the Large Hadron Collider …
Design and characterisation of a new GaN/AlGaN HEMT transistor
HEMT transistor is considered as a backbone of both optical and microwave high-power
electronic applications. In this paper, we designed and discussed the structure of an …
electronic applications. In this paper, we designed and discussed the structure of an …