A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
Next generation electric drives for HEV/EV propulsion systems: Technology, trends and challenges
In recent decades, several factors such as environmental protection, fossil fuel scarcity,
climate change and pollution have driven the research and development of a more clean …
climate change and pollution have driven the research and development of a more clean …
Solid-state transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters
Medium-voltage (MV) SiC devices have been developed recently which can be used for
three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar …
three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
[HTML][HTML] Defect inspection techniques in SiC
With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …
Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
K Vechalapu, S Bhattacharya… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
The 15-kV silicon carbide (SiC) MOSFET and 15-kV SiC IGBT are the two state-of-the-art
high-voltage SiC devices. These high-voltage SiC devices enable simple two-level …
high-voltage SiC devices. These high-voltage SiC devices enable simple two-level …
[HTML][HTML] Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices
This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …
A gate drive with power over fiber-based isolated power supply and comprehensive protection functions for 15-kV SiC MOSFET
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
K Mainali, A Tripathi… - IEEE Power …, 2015 - ieeexplore.ieee.org
The solid-state transformer (SST) is a promising power electronics solution that provides
voltage regulation, reactive power compensation, dc-sourced renewable integration, and …
voltage regulation, reactive power compensation, dc-sourced renewable integration, and …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …