Monolithic fabrication of InGaAs/GaAs/AlGaAs multiple wavelength quantum well laser diodes via impurity-free vacancy disordering quantum well intermixing
InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes
(LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing …
(LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing …
[HTML][HTML] Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl (Ga) As cladding layers
W Kobayashi, Y Ueda, T Shindo, M Mitsuhara… - Journal of Crystal …, 2024 - Elsevier
We propose a novel epitaxial layer structure to prevent Zn from diffusing into a multiple
quantum well (MQW) layer of an electro-absorption modulator (EAM). Zn is practically …
quantum well (MQW) layer of an electro-absorption modulator (EAM). Zn is practically …
InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
L Zhou, X Gao, L Xu, Z Qiao, B Bo - Solid-state electronics, 2013 - Elsevier
In order to fabricate 940 nm InGaAs/GaAsP/GaInP semiconductor lasers with non-absorbing
window (NAW), the induced quantum well intermixing (QWI) is investigated using impurity …
window (NAW), the induced quantum well intermixing (QWI) is investigated using impurity …
Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting
CLM Daunt, CS Cleary, RJ Manning… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom
epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping …
epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping …
Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic
interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray …
interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray …
Improvement of Quantum-Well Intermixing through Adjusting P-Doped Layer for High-Performance SOA-Integrated EAM
YJ Chen, YH Fang, W Hsu, RY Chen… - 2019 IEEE Photonics …, 2019 - ieeexplore.ieee.org
Large p-doping offset layer in a pin heterostructure is proposed for Impurity free vacancy
disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant …
disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant …