Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

The observation of a stimulated emission at interband transitions in monocrystalline n-InN
layers under optical pumping is reported. The spectral position of the stimulated emission …

Exciton–polaritons, which originate from the strong coupling between photon modes of
microresonators and excitons in semiconductor micro-/nanostructures, have drawn much …

We report on the achievement of electroluminescence emission of single InN pin nanowire
devices. InN pin nanowire structures were grown directly on Si substrate by plasma-assisted …

Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by
plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) …

Auger recombination in InN films grown by metal-organic chemical vapor deposition was
studied by steady-state photoluminescence at different laser excitation powers and sample …

We report on the stimulated emission (SE) in the near-infrared range from the planar InGaN
epitaxial layers grown on sapphire substrates. By varying the indium content from 100% to …

The development of electrically-driven low-dimensional coherent light sources via highly-
polarized polariton emission behavior has been extensively researched, but suffers from …

In x Al 1-x N alloys were prepared on Al 2 O 3 substrates using radio frequency magnetron
sputtering. The physical properties of In x Al 1-x N alloys sputtered at different substrate …

Comprehensive analysis of the surface and crystal properties has been performed at clean c-
plane sapphire substrates, sapphire layers after nitridation, and subsequently grown InN …