The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Abstract Nitrogen dioxide (NO 2), a hazardous gas with acidic nature, is continuously being
liberated in the atmosphere due to human activity. The NO 2 sensors based on traditional …

Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …

Novel memory devices are essential for developing low power, fast, and accurate in‐
memory computing and neuromorphic engineering concepts that can compete with the …

Bayesian networks (BNs) find widespread application in many real-world probabilistic
problems including diagnostics, forecasting, computer vision, etc. The basic computing …

Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …

Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the
transfer characteristics of monolayer molybdenum disulfide (MoS 2) field effect transistors …

Defects play a pivotal role in limiting the performance and reliability of nanoscale devices.
Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …