Status and prospects of heterojunction-based HEMT for next-generation biosensors
N Fauzi, RI Mohd Asri, MF Mohamed Omar, AA Manaf… - Micromachines, 2023 - mdpi.com
High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-
free, real-time, and direct detection. Owing to their unique properties of two-dimensional …
free, real-time, and direct detection. Owing to their unique properties of two-dimensional …
Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Sensitivity analysis of biomolecule nanocavity immobilization in a dielectric modulated triple-hybrid metal gate-all-around junctionless NWFET biosensor for detecting …
In this paper, a novel biomolecule nanocavity immobilization in a dielectric modulated triple-
hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to …
hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to …
The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors
Y Liu, Y Ma, H Guo, S Fu, Y Liu, G Wei… - Journal of Physics D …, 2023 - iopscience.iop.org
The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
Enhancement of sensing performance of GaN-based MOS-HEMT biosensors by graded AlGaN barrier
Y Liu, Y Liu, H Guo, Y Li, Y Ma, H Shen… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
To improve the sensing performance, the GaN-based MOS-HEMT biosensor with graded
AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results …
AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results …
Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies
L Kouhalvandi, SD Guerrieri - 2023 10th International …, 2023 - ieeexplore.ieee.org
Small-signal and large-signal modeling of high elec-tron mobility transistors (HEMTs) are
developing day-by-day where accurate model extractions rely on characterizing the …
developing day-by-day where accurate model extractions rely on characterizing the …
Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing
SS Kanrar, SK Sarkar - Physica Scripta, 2024 - iopscience.iop.org
Abstract AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have
emerged as promising biosensors, leveraging the unique properties of inter-channel …
emerged as promising biosensors, leveraging the unique properties of inter-channel …
Effect of barrier variabilities on the strain propagation and 2DEG profile of GaN/AlGaN HEMT heterostructures
This work presents an analysis of strain distribution and depth of 2DEG (2-Dimensional
Electron Gas) in AlGaN/GaN HEMT (high electron mobility transistor) heterostructures for …
Electron Gas) in AlGaN/GaN HEMT (high electron mobility transistor) heterostructures for …