[HTML][HTML] Role of junctionless mode in improving the photosensitivity of sub-10 nm carbon nanotube/nanoribbon field-effect phototransistors: Quantum simulation …
In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …
Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation …
K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …
with specific doping profiles are proposed, assessed, and compared with the conventional …
A novel band-to-band tunneling junctionless carbon nanotube field-effect transistor with lightly doped pocket: Proposal, assessment, and quantum transport analysis
K Tamersit - Physica E: Low-dimensional Systems and …, 2021 - Elsevier
Overcoming the performance limits encountered with the conventional nanoscale transistors
while simplifying the fabrication process is an objective that can give a new impulses to the …
while simplifying the fabrication process is an objective that can give a new impulses to the …
Improved performance of sub-10-nm band-to-band tunneling nin graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study
K Tamersit, Z Ramezani, IS Amiri - Journal of Physics and Chemistry of …, 2022 - Elsevier
In this study, we investigated the effect of underlapping on improving the performance of sub-
10-nm band-to-band tunneling (BTBT) double-gate (DG) armchair-edge graphene …
10-nm band-to-band tunneling (BTBT) double-gate (DG) armchair-edge graphene …
Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation …
In this paper, an ultrascaled ballistic graphene nanoribbon field-effect transistor (GNRFET)
endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure …
endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure …
New nanoscale band-to-band tunneling junctionless GNRFETs: Potential high-performance devices for the ultrascaled regime
K Tamersit - Journal of Computational Electronics, 2021 - Springer
Abstract High-performance sub-10-nm field-effect transistors (FETs) are considered to be a
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …
A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors
K Tamersit - Journal of Computational Electronics, 2019 - Springer
As the channel length shrinks below the 10-nm regime, emerging materials, junctionless
technology, and multiple-gate geometries provide an excellent combination to continue …
technology, and multiple-gate geometries provide an excellent combination to continue …
An ultra-sensitive gas nanosensor based on asymmetric dual-gate graphene nanoribbon field-effect transistor: Proposal and investigation
K Tamersit - Journal of Computational Electronics, 2019 - Springer
In this paper, a new ultra-sensitive gas nanosensor based on an asymmetric dual-gate
graphene nanoribbon field-effect transistor (ADG GNRFET) is proposed. The performance of …
graphene nanoribbon field-effect transistor (ADG GNRFET) is proposed. The performance of …
Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering
K Tamersit, F Djeffal - Journal of Computational Electronics, 2018 - Springer
In this paper, we report the device performance of a new graphene nanoribbon field-effect
transistor (GNRFET) with a linearly graded binary metal alloy gate through a quantum …
transistor (GNRFET) with a linearly graded binary metal alloy gate through a quantum …
A novel graphene nanoribbon field effect transistor with two different gate insulators
MA Eshkalak, R Faez, S Haji-Nasiri - Physica E: Low-dimensional Systems …, 2015 - Elsevier
In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor
(GNRFET) is offered, which combines the advantages of high and low dielectric constants. In …
(GNRFET) is offered, which combines the advantages of high and low dielectric constants. In …