[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Second generation Car–Parrinello molecular dynamics

TD Kühne - Wiley Interdisciplinary Reviews: Computational …, 2014 - Wiley Online Library
Computer simulation methods, such as Monte Carlo or molecular dynamics, are very
powerful theoretical techniques to provide detailed and essentially exact informations on …

[HTML][HTML] CP2K: An electronic structure and molecular dynamics software package-Quickstep: Efficient and accurate electronic structure calculations

TD Kühne, M Iannuzzi, M Del Ben, VV Rybkin… - The Journal of …, 2020 - pubs.aip.org
CP2K is an open source electronic structure and molecular dynamics software package to
perform atomistic simulations of solid-state, liquid, molecular, and biological systems. It is …

Ab initio molecular dynamics and materials design for embedded phase-change memory

L Sun, YX Zhou, XD Wang, YH Chen… - Npj Computational …, 2021 - nature.com
Abstract The Ge2Sb2Te5 alloy has served as the core material in phase-change memories
with high switching speed and persistent storage capability at room temperature. However …

Bonding nature of local structural motifs in amorphous GeTe

VL Deringer, W Zhang, M Lumeij… - Angewandte Chemie …, 2014 - Wiley Online Library
Despite its simple chemical constitution and unparalleled technological importance, the
phase‐change material germanium telluride (GeTe) still poses fundamental questions. In …

Material and process engineering challenges in Ge-rich GST for embedded PCM

A Redaelli, E Petroni, R Annunziata - Materials Science in Semiconductor …, 2022 - Elsevier
Abstract Phase-Change Memory (PCM) is one of the most recent technologies to enter the
embedded memory market for consumer-and automotive-grade applications. However …

Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations

I Ronneberger, W Zhang, H Eshet… - Advanced Functional …, 2015 - Wiley Online Library
Ge2Sb2Te5 (GST) is an important phase‐change material used in optical and electronic
memory devices. In this work, crystal growth of GST at 600 K is investigated by ab initio …

Impact of interfaces on scenario of crystallization of phase change materials

P Noé, C Sabbione, N Bernier, N Castellani, F Fillot… - Acta Materialia, 2016 - Elsevier
Chalcogenide phase change materials (PCMs), such as Ge-Sb-Te alloys, have outstanding
properties, which has led to their successful use for a long time in optical memories (DVDs) …

The race of phase change memories to nanoscale storage and applications

AL Lacaita, A Redaelli - Microelectronic engineering, 2013 - Elsevier
The successful development of phase change memory technology (PCM) has been one of
the most relevant novelties in the field of semiconductor memories of the last years. PCM …

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

W Wang, D Loke, L Shi, R Zhao, H Yang, LT Law… - Scientific Reports, 2012 - nature.com
The quest for universal memory is driving the rapid development of memories with superior
all-round capabilities in non-volatility, high speed, high endurance and low power. Phase …