2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

C Leblanc, S Song, D Jariwala - Current Opinion in Solid State and …, 2024 - Elsevier
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Q Liu, S Cui, R Bian, E Pan, G Cao, W Li, F Liu - ACS nano, 2024 - ACS Publications
In recent years, there has been growing interest in functional devices based on two-
dimensional (2D) materials, which possess exotic physical properties. With an ultrathin …

Investigation on floating-gate field-effect transistor for logic-in-memory application

S Kim, S Cho, I Choi, M Kang, S Baik… - Journal of Physics D …, 2023 - iopscience.iop.org
In this paper, we present analysis results on the applicability of a previously introduced
memory device, floating-gate field-effect transistor (FGFET), to a logic-in-memory (LiM) …

Hafnia-based neuromorphic devices

H Zhong, K Jin, C Ge - Applied Physics Letters, 2024 - pubs.aip.org
The excellent complementary metal-oxide-semiconductor compatibility and rich
physicochemical properties of hafnia-based materials, in particular the unique ferroelectricity …

FETs for Analog Neural MACs

RR Das, TR Rajalekshmi, S Pallathuvalappil… - IEEE …, 2024 - ieeexplore.ieee.org
This study provides a comprehensive view on neural network systems with implemented
with crossbar circuits, and device-level understanding of modern FET technologies in …

Non-volatile memory characteristics of flexible ferroelectric field-effect transistors consisting of Sm-doped BiFeO3 thin films

Y Ahn, JY Son - Ceramics International, 2024 - Elsevier
This study investigates the impact of Sm doping on the structural, electrical, and functional
properties of BiFeO 3 (BFO) thin films. The aim is to improve their non-volatile memory …

Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

H Liu, F Yu, B Chen, ZD Luo, J Chen, Y Zhang… - Materials …, 2024 - iopscience.iop.org
Ferroelectric HfO 2-based materials and devices show promising potential for applications in
information technology but face challenges with inadequate electrostatic control, degraded …

Emerging ferroelectric thin films: Applications and processing

SK Kurinec, U Schroeder, G Subramanyam… - Handbook of Thin Film …, 2025 - Elsevier
Ferroelectrics possess a variety of interactions between electrical, mechanical, and thermal
properties, enabling numerous functionalities. Integration of these functionalities into …

Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin films

Y Wang, C Zhu, H Sun, W Wang, L Zou, Y Yi… - Applied Physics …, 2024 - pubs.aip.org
The sublayer thickness of superlattices, as a key factor affecting lattice integrity, interface
defects, and strain, deserves in-depth studies about its impact on improving ferroelectric …

Leveraging the Academic Artificial Intelligence Silecosystem to Advance the Community Oncology Enterprise

KJ McDonnell - Journal of Clinical Medicine, 2023 - mdpi.com
Over the last 75 years, artificial intelligence has evolved from a theoretical concept and
novel paradigm describing the role that computers might play in our society to a tool with …