For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Neuromorphic systems that can emulate the structure and the operations of biological neural
circuits have long been viewed as a promising hardware solution to meet the ever-growing …

Resistive switching devices have shown potential in storage class memory and artificial
intelligence applications but however, it faces drastic limitations due to low endurance, bad …

Organic nonvolatile memory devices have a vital role for the next generation of electrical
memory units, due to their large scalability and low-cost fabrication techniques. Here, we …

Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …

With the rapid development of transparent integrated circuits, transistors with extremely low
subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three …

Memristors have received tremendous attention recently for neuromorphic computing and
high-density data storage due to their potential for miniaturization; however, the …

The resistive switching response of two terminal metal/oxide/metal devices depends on the
stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal …

Metal/semiconductor nanocomposites present the most versatile way to tune the optical and
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …

In this study, we report the Poole-Frenkel induced threshold switching characteristics of
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …