Robust approach towards wearable power efficient transistors with low subthreshold swing
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
Dynamic resistive switching devices for neuromorphic computing
Neuromorphic systems that can emulate the structure and the operations of biological neural
circuits have long been viewed as a promising hardware solution to meet the ever-growing …
circuits have long been viewed as a promising hardware solution to meet the ever-growing …
Improved memory performance of ALD grown HfO2 films by nitrogen doping
Resistive switching devices have shown potential in storage class memory and artificial
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
Stable and multilevel data storage resistive switching of organic bulk heterojunction
Organic nonvolatile memory devices have a vital role for the next generation of electrical
memory units, due to their large scalability and low-cost fabrication techniques. Here, we …
memory units, due to their large scalability and low-cost fabrication techniques. Here, we …
Discrete memristive levels and logic gate applications of Nb2O5 devices
Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …
Power efficient transistors with low subthreshold swing using abrupt switching devices
With the rapid development of transparent integrated circuits, transistors with extremely low
subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three …
subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three …
Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering
J Xu, H Wang, Y Zhu, Y Liu, Z Zou, G Li, R Xiong - Applied Surface Science, 2022 - Elsevier
Memristors have received tremendous attention recently for neuromorphic computing and
high-density data storage due to their potential for miniaturization; however, the …
high-density data storage due to their potential for miniaturization; however, the …
Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors
The resistive switching response of two terminal metal/oxide/metal devices depends on the
stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal …
stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal …
Au decorated ZnO nanostructures for enhanced visible emission and memory applications
Metal/semiconductor nanocomposites present the most versatile way to tune the optical and
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …
Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x= 2.0–2.5) films
In this study, we report the Poole-Frenkel induced threshold switching characteristics of
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …