Spin-transfer torque magnetic random-access memory (STT-MRAM) is the most promising
next-generation memory technology that combines the advantages of mainstream memory …

This paper evaluates the potential of spin-transfer torque magnetic random-access
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …

The ever-growing interest in cryogenic applications has prompted the investigation for
energy-efficient and high-density memory technologies that are able to operate efficiently at …

In this paper, a variation-aware simulation framework for hybrid circuits comprising MOS
transistors and magnetic tunnel junction (MTJ) devices is presented. The framework is …

This article investigates spin-transfer torque magnetic random access memories (STT-
MRAMs) based on double-barrier magnetic tunnel junction (DMTJ) with two reference layers …

Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic
tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile …

This paper shows the steps to set up a simulation framework for perpendicular spin-transfer
torque (STT)-magnetic tunnel junctions (MTJs) with double-barrier and two antiparallel …

This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-
MRAMs) based on nanoscaled perpendicular magnetic tunnel junctions (MTJs) and FinFET …

This paper explores non-volatile cache memories implemented by spin-transfer torque
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …

This paper describes a robust, modular, and physics-based circuit framework to model the
conventional and emerging magnetic tunnel junction (MTJ) devices. Magnetization …