Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

As the size of modern electronic and optoelectronic devices is scaling down at a steady
pace, atomistic simulations become necessary for an accurate modelling of their structural …

Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles
representative of present and future silicon complementary metal–oxide–silicon (CMOS) …

Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate
the current–voltage response of a low-temperature molecular-beam-epitaxy-grown silicon …

Interband tunnel diodes which are compatible with Si-based processes such as, but not
limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with …

We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low
temperature molecular beam epitaxy (T/sub growth/= 275/spl deg/C) using in situ boron and …

The in situ hydrogen-passivated Si (100)-2× 1 surface is characterized with x-ray
photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy …

Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband
tunneling diodes (RITDs) with extremely high peak current densities are presented. By …

We demonstrate the first silicon tunnel diodes formed using proximity rapid thermal diffusion
and spin-on diffusants. Room temperature peak-to-valley current ratio (PVR) of 2 is obtained …

Si/SiGe resonant interband tunnel diodes (RITDs) employing/spl delta/-doping spikes that
demonstrate negative differential resistance (NDR) at room temperature are presented …